Process for transferring a thin layer to a support substrate that have different thermal expansion coefficients

ABSTRACT

A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick laver; introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/618,696, filed Dec. 2, 2019, which is a national phase entry under 35U.S.C. § 371 of International Patent Application PCT/EP2018/066552,filed Jun. 21, 2018, designating the United States of America andpublished as International Patent Publication WO 2019/002080 A1 on Jan.3, 2019, which claims the benefit under Article 8 of the PatentCooperation Treaty to French Patent Application Serial No. 1756116,filed Jun. 30, 2017.

TECHNICAL FIELD

The present disclosure relates to the field of heterogeneous structures,combining two substrates that have different coefficients of thermalexpansion. More particularly, the present disclosure relates to aprocess for transferring a thin layer onto a support substrate. Thismanufacturing process is used, for example, in the fields ofmicroelectronics, micromechanics, photonics, etc.

BACKGROUND

Various processes for forming a thin layer on a support substrate areknown from the prior art. Such processes may be, for example, molecularbeam epitaxy, plasma sputtering, plasma deposition (laser pulseddeposition) or application of the Smart Cut™ technology in which a thinlayer is taken from a bulk substrate by fracturing at a fragile zone (orembrittlement plane) formed in the bulk substrate by implantation oflight species.

The present disclosure more particularly relates to the formation of athin layer made of ferroelectric material obtained by applying such aprocess, as is taught in FR 2 914 492.

Application of the Smart Cut™ process is particularly suited to the casewhere the material of the thin layer that it is desired to transfer hasa coefficient of thermal expansion similar to that of the supportsubstrate onto which the transfer takes place.

In the opposite case, the temperature to which the assembly formed fromthe support substrate and the donor substrate may be subjected islimited. Thus, FR 2 856 192 recalls that a heat treatment above atemperature determined by the value of the coefficients of thermalexpansion of the materials may lead to uncontrolled fracturing of one ofthe substrates and/or to peeling of the donor substrate or of the thinlayer. This poses a problem since the Smart Cut™ process may make itnecessary to perform at least one heat treatment at a sufficienttemperature in order, for example, to reinforce the adhesion of thedonor substrate to the support substrate, or to facilitate the fractureof the donor substrate on the embrittlement plane.

BRIEF SUMMARY

One aim of the present disclosure is to propose a process fortransferring a thin layer consisting of a first material onto a supportsubstrate consisting of a second material, the first and the secondmaterials having different coefficients of thermal expansion, which atleast partly addresses the abovementioned problem. It notably finds itsapplication in transferring a thin layer made of ferroelectric materialonto a support having a coefficient of expansion different from that ofthe material of which this thin layer is composed, for example, asupport substrate made of silicon.

For the purpose of achieving one of these aims, the subject of thepresent disclosure proposes a process for transferring a thin layerconsisting of a first material onto a support substrate consisting of asecond material, the first and the second materials having differentcoefficients of thermal expansion. According to the present disclosure,the process for transferring the thin layer includes the provision of adonor substrate composed of the assembly of a thick layer formed fromthe first material and from a handling substrate, the coefficient ofthermal expansion of the handling substrate being similar to that of thesupport substrate and the donor substrate having a main face on thethick layer side; the introduction of light species into the thick layerto generate an embrittlement plane therein and to define the thin layerbetween the embrittlement plane and the main face of the donorsubstrate; the assembly of the main face of the donor substrate with oneface of the support substrate; detachment of the thin layer from theembrittlement plane, the detachment comprising the application of a heattreatment.

The assembly formed from the donor substrate and the support may beexposed to a much higher temperature than that applied in the context ofa “direct” approach in accordance with the prior art, according to whichthe donor substrate does not include any handling substrate, withoutrisk of uncontrolled fracture of one of the substrates or peeling of thedonor substrate or of the thin layer. The balanced structure, in termsof coefficient of thermal expansion of this assembly, notably makes itpossible to facilitate the step of detachment of the thin layer byexposing the assembly to a relatively high temperature.

According to other advantageous and non-limiting characteristics of thepresent disclosure, taken alone or in any technically feasiblecombination:

-   -   the coefficient of thermal expansion of the first material        constituting the thick layer and that of the second material        constituting the support substrate differ by at least 10% at        room temperature;    -   the difference in coefficient of thermal expansion of the        constituent of the handling substrate and of that of the support        is less, as an absolute value, than the difference in thermal        expansion of the thick layer and of that of the support        substrate;    -   the light species implanted are hydrogen ions and/or helium        ions;    -   the first material is a ferroelectric material such as LiTaO₃,        LiNbO₃, LiAlO₃, BaTiO₃, PbZrTiO₃, KNbO₃, BaZrO₃, CaTiO₃, PbTiO₃        or KTaO₃;    -   the material of the support substrate is silicon;    -   the handling substrate is of the same nature as the support        substrate;    -   the handling substrate has a thickness equivalent to that of the        support substrate;    -   the thick layer has a thickness of between 10 and 400        micrometers to enable sampling of one or more thin layers;    -   the donor substrate is obtained by bonding a source substrate        and the handling substrate;    -   the bonding is obtained by molecular adhesion;    -   a step of thinning the source substrate is included to provide        the thick layer;    -   the thinning step is performed by milling and/or        chemical-mechanical polishing (CMP) and/or etching.

BRIEF DESCRIPTION OF THE DRAWINGS

Other features and advantages of embodiments of the present disclosurewill become apparent from the following detailed description ofembodiments of the present disclosure, which description is given withreference to the appended figures, in which:

FIGS. 1A to 1D show an embodiment of a process in accordance with thepresent disclosure; and

FIG. 2 schematically represents a process for forming a donor substratein accordance with the present disclosure.

DETAILED DESCRIPTION

For the sake of keeping the following description simple, the samereferences are used for identical elements or for elements performingthe same function in the prior art or in the various presentedembodiments of the process.

The figures are schematic representations that, for the sake oflegibility, are not to scale. In particular, the thicknesses of thelayers are not to scale with respect to the lateral dimensions of theselayers.

The term “coefficient of thermal expansion” used in the rest of thisdescription in relation to a layer or a substrate makes reference to thecoefficient of expansion in a defined direction in the main planedefining this layer or this substrate. If the material is anisotropic,the coefficient value retained will be that of largest amplitude. Thecoefficient value is that measured at room temperature.

The present disclosure relates to a process for transferring a thinlayer 3 consisting of a first material onto a support substrate 7consisting of a second material, the first and the second materialshaving different coefficients of thermal expansion. The term “different”means that these coefficients differ by at least 10%.

In the context of this description, it will be considered, by way ofexample, that the thin layer 3 is made of ferroelectric material and thesupport substrate 7 is made of silicon (the coefficient of thermalexpansion of which is estimated as 2.6×10⁻⁶ K⁻¹).

It is recalled that a ferroelectric material is a material that has anelectrical polarization in the natural state, it being possible for thispolarization to be reversed by applying an external electric field. Theferroelectric domain refers to each continuous region of the material inwhich the polarization is uniform (all the dipole moments are alignedparallel to each other in a given direction). A ferroelectric materialmay thus be characterized as a “monodomain” in the case where thismaterial consists of a single region in which the polarization isuniform or a “multidomain” in the case where the ferroelectric materialcomprises a plurality of regions having polarities that may bedifferent.

In general, it is generally desirable to have a ferroelectric thin layerof monodomain nature.

With reference to FIG. 1A, the donor substrate 1 is composed of a thicklayer of ferroelectric material 1 a, for example, of LiTaO(2×10⁻⁶ K⁻¹(z), 16×10⁻⁶ K⁻¹ (x, y)), LiNbO₃, LiAlO₃, BaTiO₃, PbZrTiO₃, KNbO₃,BaZrO₃, CaTiO₃, PbTiO₃ or KTaO₃ and of a handling substrate 1 b. Thedonor substrate 1 may take the form of a circular wafer of standardizedsize, for example, of 150 mm or 200 mm in diameter. However, the presentdisclosure is not in any way limited to these dimensions or to thisform. The thick layer of ferroelectric material 1 a may have beensampled from an ingot of ferroelectric material, this sampling havingbeen performed so that the thick layer 1 a has a predeterminedcrystalline orientation. The orientation is chosen as a function of theintended application. Thus, it is common practice to choose anorientation 42° RY in the case where it is desired to exploit theproperties of the thin layer to form a SAW filter. However, the presentdisclosure is not in any way limited to a particular crystallineorientation.

The handling substrate 1 b advantageously consists of a material (or ofa plurality of materials) giving it a coefficient of thermal expansionclose to that of which the support substrate 7 is composed. The term“close” means that the difference in coefficient of thermal expansion ofthe handling substrate 1 b and of that of the support substrate 7 isless, as an absolute value, than the difference in thermal expansion ofthe thick layer of ferroelectric material 1 a and of that of the supportsubstrate 7.

Preferentially, the handling substrate 1 b and the support substratehave an identical coefficient of thermal expansion. During the assemblyof the donor substrate 1 and of the support substrate 7, a structure isformed that is capable of withstanding a heat treatment at a relativelyhigh temperature. For the sake of ease of implementation, this may beobtained by selecting the handling substrate 1 b so that it consists ofthe same material as that of the support substrate 7.

To form the donor substrate 1, a bulk block of ferroelectric material ispreassembled with the handling substrate 1 b, for example, by means of amolecular adhesive bonding technique. Next, the layer of ferroelectricmaterial 1 a is formed by thinning, for example, by milling and/orchemical-mechanical polishing and/or etching. This process is presentedschematically in FIG. 2 . Before assembling, an adhesion layer may beformed (for example, by deposition of silicon oxide and/or siliconnitride) on one and/or another of the faces placed in contact during theassembling. The assembling may comprise the application of alow-temperature heat treatment (for example, between 50 and 300° C.,typically 100° C.) making it possible to strengthen the bonding energysufficiently to allow the following step of thinning.

The handling substrate 1 b may be chosen to have a thicknesssubstantially equivalent to that of the support substrate 7. Thethinning step is performed such that the thick layer 1 a has a thicknessthat is small enough for the stresses generated during the heattreatments applied in the rest of the process to be of reducedintensity. At the same time, this thickness is large enough to be ableto sample the thin layer 3 or a plurality of such layers therefrom. Thisthickness may be, for example, between 5 and 400 microns.

The process comprises the introduction into the donor substrate 1 of atleast one light atomic or ionic species. This introduction maycorrespond to an implantation, i.e., ion bombardment of the main face 4of the donor substrate 1 with light elemental species such as hydrogenand/or helium ions.

In a manner known per se, and as is represented in FIG. 1B, theimplanted ions have the role of forming an embrittlement plane 2delimiting a thin layer 3 of ferroelectric material to be transferred,which is located on the main face 4 side and another part 5 constitutingthe rest of the substrate.

The nature, the dose of the implanted species and the implantationenergy are chosen as a function of the thickness of the layer that it isdesired to transfer and of the physicochemical properties of the donorsubstrate. In the case of a donor substrate 1 made of LiTaO₃, it maythus be chosen to implant a dose of hydrogen of between 1^(E)16 and5^(E)17 at/cm² with an energy of between 30 and 300 keV to delimit athin layer 3 of the order of 200 to 2000 nm.

In a following step, represented in FIG. 1C, the main face 4 of thedonor substrate 1 is assembled with one face 6 of a support substrate 7.The support substrate 7 may have the same dimensions and the same shapeas those of the donor substrate. For reasons of availability and cost,the support substrate 7 is a monocrystalline or polycrystalline siliconwafer. However, more generally, the support substrate 7 may consist ofany material, for example, silicon, sapphire or glass, and may have anyshape.

Prior to this step, it may be envisaged to prepare the faces of thesubstrates to be assembled via a step of cleaning, brushing, drying,polishing or plasma activation.

The assembling step may correspond to placing the donor substrate 1 inintimate contact with the support substrate 7 by molecular adhesionand/or electrostatic bonding. Optionally, to facilitate the assemblingof the donor substrate 1 and support substrate 7, notably when they areassembled by direct bonding, at least one intermediate layer may beformed prior to the assembling, either on the main face 4 of the donorsubstrate 1, or on the flat face 6 to be assembled of the supportsubstrate 7, or on both. This intermediate layer consists, for example,of silicon oxide, silicon nitride or polycrystalline silicon and has athickness of between a few nanometers and a few microns. Theintermediate layer may be produced according to the various techniquesknown in the prior art, such as oxidation or nitridation heattreatments, chemical depositions (PECVD, LPCVD, etc.), etc.

On conclusion of this assembling step, the assembly represented in FIG.1C is obtained, comprising the donor substrate 1 and the supportsubstrate 7, the flat face 6 of the support substrate 7 adhering to themain face 4 of the donor substrate 1.

The assembly is then treated to detach the thin layer 3 of ferroelectricmaterial from the donor substrate 1, for example, by cleavage along theembrittlement plane 2.

This detachment step may thus comprise the application to the assemblyof a heat treatment in a temperature range on the order of 80° C. to500° C. to allow the transfer of the thin layer 3 onto the supportsubstrate 7. In addition to the heat treatment, this step may comprisethe application of a blade or jet of gaseous or liquid fluid to theembrittlement plane 2. In the case of a ferroelectric material, carewill be taken not to exceed its Curie temperature, so as not todeteriorate the characteristics of the thin layer.

Following this detachment step, the structure 9 represented in FIG. 1Dis obtained. This structure 9 comprises the thin layer 3 offerroelectric material comprising a first free face 8 and its main face4 arranged on the support substrate 7.

The assembly formed from the donor substrate 1 and the support substrate7 may be exposed to a much higher temperature than that applied in thecontext of a “direct” approach in accordance with the prior art,according to which the donor substrate does not include any handlingsubstrate, without risk of uncontrolled fracture of one of thesubstrates or peeling of the donor substrate 1 or of the thin layer 3.The balanced structure, in terms of coefficient of thermal expansion ofthis assembly, thus makes it possible to facilitate the step ofdetachment of the thin layer 3 by exposing the assembly to a relativelyhigh temperature, for example, of between 80° C. and 500° C.

It is then possible to perform a step of finishing of the thin layer 3and notably of its free face 8 in order to restore and/or improve thedesired properties of this thin layer 3. As is well known per se, thisfinishing may comprise polishing, etching, sacrificial oxidation, orannealing under a neutral or reductive or oxidizing atmosphere.

In the context of the example that has just been presented, and in whichthe thin layer 3 is made of ferroelectric material, this finishing stepmay correspond to a heat treatment of the thin layer 3 followed bypolishing, this sequence making it possible to restore the initialmonodomain properties, which the thick layer of ferroelectric material 1a had, for example, following an orientation of 42°RY, on the thin layer3 after transfer. However, the present disclosure is not in any waylimited to a particular finishing sequence.

The heat treatment makes it possible to correct crystalline defectspresent in the thin layer 3. In addition, it contributes towardconsolidating the bonding between the thin layer 3 and the supportsubstrate 7. The heat treatment brings the structure to a temperature ofbetween 300° C. and the Curie temperature of the ferroelectric materialfor a time of between 10 seconds and 10 hours. This heat treatment ispreferentially performed by exposing the free face 8 of the thin layer 3to an oxidizing or neutral gaseous atmosphere.

The preparation process also includes, after the heat treatment,thinning of the thin layer 3. This thinning may correspond to polishingof the first free face 8 of the thin layer 3, for example, by means ofmechanical polishing, chemical-mechanical polishing and/or chemicaletching thinning techniques. It makes it possible to prepare the freeface 8 so that it has little roughness, for example, less than 0.5 nmRMS 5×5 μm by atomic force measurement (AFM) and to remove a surfacepart of the first free face 8 of the thin layer 3 that is liable tocontain residual defects.

Needless to say, the present disclosure is not limited to the exampledescribed and embodiment variants may be made thereto without departingfrom the scope of the present disclosure as defined by the claims.

Furthermore, the present disclosure applies to any “heterogeneous”structure in which differences in coefficient of thermal expansion existbetween the thin layer 3 and the support substrate 7, for instance, inthe case of a silicon on quartz or silicon on sapphire structure.

What is claimed is:
 1. A donor substrate comprising: a source substratebonded to a handle substrate along an interface, wherein a coefficientof thermal expansion of the source substrate is different than acoefficient of thermal expansion of the handle substrate; and anembrittlement plane comprising at least one light species within thesource substrate, the embrittlement plane delimiting a thin layerbetween the embrittlement plane and a surface of the source substrateopposite the interface between the source substrate and the handlesubstrate.
 2. The donor substrate of claim 1, further comprising atleast one adhesion layer between the source substrate and the handlesubstrate.
 3. The donor substrate of claim 2, wherein the at least oneadhesion layer comprises one or more of silicon oxide and siliconnitride.
 4. The donor substrate of claim 1, wherein the source substratehas a thickness between 5 microns and 400 microns.
 5. The donorsubstrate of claim 1, wherein the at least one light species comprisesone or more of hydrogen ions and helium ions.
 6. The donor substrate ofclaim 1, wherein the thin layer has a thickness of between 200 nm to2000 nm.
 7. The donor substrate of claim 1, wherein the coefficient ofthermal expansion of the source substrate differs from the coefficientof thermal expansion of handle substrate by at least 10% at roomtemperature.
 8. The donor substrate of claim 1, wherein the sourcesubstrate comprises a ferroelectric material and the handle substratecomprises silicon.
 9. An assembly comprising: a donor substratecomprising a first material bonded to a handle substrate, wherein acoefficient of thermal expansion of the first material is different thana coefficient of thermal expansion of the handle substrate; a supportsubstrate attached to the first material of the donor substrate, whereina coefficient of thermal expansion of the support substrate is differentthan a coefficient of thermal expansion of the first material; and anembrittlement plane comprising at least one light species within thefirst material, the embrittlement plane delimiting a thin layer of thefirst material between the embrittlement plane and the supportsubstrate.
 10. The assembly of claim 9, further comprising at least oneintermediate layer between the donor substrate and the supportsubstrate.
 11. The assembly of claim 10, wherein the at least oneintermediate layer comprises silicon oxide, silicon nitride, orpolycrystalline silicon.
 12. The assembly of claim 9, wherein anabsolute value difference between the coefficient of thermal expansionof the handle substrate and the coefficient of thermal expansion of thesupport substrate is less than an absolute value difference between thecoefficient of thermal expansion of the first material and thecoefficient of thermal expansion of the support substrate.
 13. Theassembly of claim 9, wherein the coefficient of thermal expansion of thehandle substrate is equal to the coefficient of thermal expansion of thesupport substrate.
 14. The assembly of claim 9, wherein a thickness ofthe handle substrate is substantially equal to a thickness of thesupport substrate.
 15. The assembly of claim 9, wherein the supportsubstrate comprises silicon, sapphire, or glass.
 16. A donor substratecomprising: a ferroelectric material bonded to a handle substrate,wherein a coefficient of thermal expansion of the handle substrate isdifferent than a coefficient of thermal expansion of the handlesubstrate; and an embrittlement plane comprising at least one lightspecies implanted in the ferroelectric material, the embrittlement planedelimiting a thin layer of the ferroelectric material between the atleast one light species and a main face of the donor substrate.
 17. Thedonor substrate of claim 16, wherein the ferroelectric material isselected from the group consisting of LiTaO₃, LiNbO₃, LiAlO₃, BaTiO₃,PbZrTiO₃, KNbO₃, BaZrO₃, CaTiO₃, PbTiO₃, and KTaO₃.
 18. The donorsubstrate of claim 16, wherein the ferroelectric material is bonded bymolecular adhesion to the handle substrate.
 19. The donor substrate ofclaim 16, wherein the handle substrate comprises silicon, sapphire, orglass.
 20. The donor substrate of claim 16, wherein the coefficient ofthermal expansion of the handle substrate is about 2.6×10⁻⁶ K⁻¹.